1GB 200pin DDR2 800 So-DIMM With 128mx8 Cl5
| Introduction | |
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| The TS128MSQ64V8U is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8U consists of 8pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V8U is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features - RoHS compliant products. - JEDEC standard 1.8V ± 0.1V Power supply. - VDDQ=1.8V ± 0.1V. - Max clock Freq: 400MHZ; 800Mb/s/Pin. - Posted CAS. - Programmable CAS Latency: 3,4,5. - Programmable Additive Latency :0, 1,2,3 and 4. - Write Latency (WL) = Read Latency (RL)-1. - Burst Length: 4,8(Interleave/nibble sequential). - Programmable sequential / Interleave Burst Mode. - Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature). - Off-Chip Driver (OCD) Impedance Adjustment. - MRS cycle with address key programs. - On Die Termination. - Serial presence detect with EEPROM. |
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